Sr. SiC and GaN Device Characterization Engineer

We are seeking a highly motivated SiC and GaN Device Characterization Engineer to lead electrical characterization of silicon carbide and gallium nitride power semiconductor devices including MOSFETs, JFETs, and power modules. The engineer will support technology teams for all new technology characterization, robustness measurements, FOM validation and competitor benchmarking through device testing and data analysis.

The ideal candidate will have strong expertise in high-voltage/high-temperature semiconductor characterization, power device physics, and test methods for wide-bandgap devices.

Key Responsibilities

· Perform electrical characterization of SiC and GaN power devices across temperature, voltage, and switching conditions.

· Develop and execute characterization plans for:

o Static electrical performance (BVdss, leakage, Vth, RDS(on), transfer/output curves)

o Dynamic switching performance (Qg, switching losses, dv/dt, di/dt, short-circuit, avalanche robustness)

· Characterize SiC JFET/MOSFETs under DC and switching stress.

· Analyze device behavior under gate-drain, drain-source, and transient stress conditions.

· Collaborate with process, design, packaging, and reliability teams to optimize device performance and robustness.

· Drive correlation studies between wafer-level, package-level, and system-level electrical performance.

· Develop automated characterization methodologies using scripting and test automation tools.

· Generate technical reports, and engineering recommendations for design reviews and product qualification.