Sr SiC & GaN Technology Reliability Engineer

Position Summary

We are seeking a highly motivated SiC & GaN Technology Reliability Engineer to drive reliability qualification, failure analysis, and robustness assessment of next-generation wide-bandgap power semiconductor technologies including Silicon Carbide (SiC) and Gallium Nitride (GaN) devices.

The engineer will lead reliability methodology development, accelerated stress testing, degradation analysis, and qualification activities for discrete devices, and power modules used in industrial, AI datacenter, renewable energy, and high-voltage power conversion applications.

This role requires deep understanding of wide-bandgap device physics, reliability mechanisms, electrical characterization, and technology qualification under high-voltage, high-temperature, and switching stress conditions.

Key Responsibilities

• Develop and execute reliability qualification strategies for SiC and GaN technologies across wafer, package, and system levels.
• Design and own accelerated stress methodologies for:
  • HTRB / HTGB , H3TRB / THB , Temperature cycling, Power cycling
  • TDDB, Gate oxide reliability
  • Short-circuit ruggedness, Avalanche / UIS robustness
  • High-temperature operating life (HTOL) , Switching reliability under dynamic stress
• Develop lifetime acceleration models and reliability projections for mission-profile applications.
• Correlate electrical, thermal, material, and process parameters with device degradation and field reliability.
• Lead root-cause investigations for reliability failures using electrical, physical, and material analysis techniques.
• Work closely with process integration, device design, product engineering, packaging, and quality teams to improve technology robustness.
• Generate qualification reports, reliability summaries, statistical analyses, and executive-level recommendations.